The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an
ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 x 10 14–1 x 10 16
ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated
by varying the annealing temperature from room temperature to 400°C after implantation. Raman
spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic
boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced
Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission
Electron Microscopy (TEM) results also are reported briefly.