Electronic and annealing properties of the E0.31 defect introduced during Ar plasma etching of germanium
03 Nov 2009Please read abstract in article.
| Authors: | Auret, F.D. (Francois Danie), Coelho, Sergio M.M., Myburg, G., Janse van Rensburg, P.J. (Pieter Johan), Meyer, W.E. (Walter Ernst) |
| Institution: | University of Pretoria |
| Keywords: | Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects, Ar plasma etching, DLTS, Annealing, Defects |