Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC
10 Nov 2017Please read abstract in the article.
| Authors: | Omotoso, Ezekiel, Paradzah, Alexander Tapera, Legodi, M.J. (Matshisa Johannes), Diale, M. (Mmantsae Moche), Meyer, W.E. (Walter Ernst), Auret, F.D. (Francois Danie) |
| Institution: | University of Pretoria |
| Keywords: | High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation, High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation |