E-band active Q-enhanced pseudo-combline resonator in 130nm SiGe BiCMOS
02 Aug 2018We present an active Q-enhanced pseudo-combline resonator integrated in 130 nm SiGe BiCMOS. It is shown that the resonator Q0 can be enhanced, controllably, from 15 to 1578 at 78.8 GHz through application of a SiGe HBT-based negative resistance circuit. This is the first time that resonator Q-enhancement is demonstrated experimentally in silicon above 40 GHz, and the first time negative enhancement with single-ended pseudo-combline loading is used.
| Authors: | Singh, Nishant, Stander, Tinus |
| Institution: | University of Pretoria |
| Keywords: | BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits, BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits |