Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon

25 Mar 2020

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http://hdl.handle.net/2263/73832

Authors:	Abdurrazaq, Abdulgaffar, Raji, Abdulrafiu T., Meyer, W.E. (Walter Ernst)
Institution:	University of Pretoria
Keywords:	Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex, Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex